ims chips partner for advanced nanopatterning
Transcrição
ims chips partner for advanced nanopatterning
Fax registration Information IMS CHIPS PARTNER FOR ADVANCED NANOPATTERNING to Institut für Mikroelektronik Stuttgart Fax +49 (0) 711 / 21 855 222 (Online registration is also possible: www.ims-chips.de) Deadline for registration October 12, 2007 Participation fee (includes lunch + dinner) 120,- € incl. VAT We will invoice you for the fee. Speakers free. You will receive a confirmation of registration. Cancellation In case of cancellation after expiration of the deadline 75% of the fee will be charged. It is possible to send a substitute for a registered person. Sender How to get to IMS by car Leave autobahn A8 or A81 at the intersection "Autobahnkreuz Stuttgart"in the direction of "Vaihingen". Take exit "Universität". At the traffic light, turn left to "Universitätsstraße". Stay on this road. Then, shortly after Fraunhofer Institute, turn right to "Allmandring". First name, last name IMS is the green building immediately on the left set back from the street. Parking spaces are available opposite to the entrance to IMS. Company, institution Street, house number, PO box Organization Mathias Irmscher phone +49 (0) 711 / 21 855-450 fax +49 (0) 711 / 21 855-7450 e-mail [email protected] Zip code, city Country Contact Viktoria Syassen phone +49 (0) 711 / 21 855-202 fax +49 (0) 711 / 21 855-222 e-mail [email protected] Phone, fax E-mail o yes o no Do you intend to participate in the joint dinner? Date, signature Please use one form per person. 5th Workshop “Masks & More“ October 26, 2007 in Stuttgart Address Institut für Mikroelektronik Stuttgart (IMS) Allmandring 30 a 70569 Stuttgart www.ims-chips.de 061/F/09_07 Institut für Mikroelektronik Stuttgart 5th Workshop „Masks & More“ It is our pleasure to invite you to our 5th “Mask & More” workshop. This one-day-event has been well established as a platform where our collaboration partners and guests get the latest information in nano patterning using advanced and emerging lithographic techniques. In addition, workshop participants can discover new technical and business opportunities enabled by IMS’ and our partner’s technologies, know-how, and infrastructure. We also are proud to announce that again this year numerous experts from our partner companies and institutes are giving presentations covering their joint projects with IMS. In addition to our long-term work on resist evaluation for mask making and direct write and our work on future mask concepts, we have started a program in the last year focussing activities on the development of components for multiple-beam pattern generators. In close cooperation with project partners we will combine CMOS devices and micromechanical parts to a blanking system for electron or ion beams. Our Vistec E-beam writer was upgraded with a new high-resolution column. With the achieved resolution capability of 40 nm half pitch in dedicated pCARs we are now operating a powerful tool suitable for future tasks in nano patterning. Remarkable progress has been achieved in the recently launched European imprint initiative within the framework of MEDEA+. One milestone for IMS was the fabrication of the first dual damascene templates with minimum pillar size of down to 50 nm. In this pre-competitive technology stage we are now working on a world-wide collaboration with partners in the US and Japan. I look forward to seeing you on October 26. Mathias Irmscher Program Friday, October 26, 2007 Joachim Burghartz, Mathias Irmscher, IMS, Stuttgart Axel Feicke AMTC Dresden Koji Shirakawa Fujifilm Fokuoka, Japan Tasuku Matsumiya TOK Kanagawa, Japan Andreas Erdmann FhG IISB Erlangen Welcome and IMS lithography update 2007 9:30 Bert Jan Kampherbeek MAPPER Lithography Delft, Netherlands MAPPER: High throughput maskless lithography 14:00 Future node resist requirements for photomasks and direct write e-beam processes 9:50 Elmar Platzgummer Projection maskless patterning for the fabrication of leading-edge complex masks and 3D templates 14:20 IMS Nanofabrication Vienna, Austria The material design of mask resist for the next generation lithography 10:10 Josef Weber FhG IZM Munich 3D chip integration using through Si vias and solid-liquid interdiffusion bonding 14:40 Recent progress of TOK chemically amplified e-beam resist 10:30 Wolfram Klingler IMS Stuttgart Chip designs for multiple beam aperture plates 15:00 Evaluation of mask materials and geometries by lithography simulation 10:50 Volker Boegli NaWoTec Roßdorf Electron-beam based mask and template repair 15:20 Coffee Break 11:10 Coffee Break 15:40 Catadioptric optics enabling hyper-NA immersion lithography 11:30 Jordan Owens ATDF Austin, TX, USA Dual Damascene BEOL processing using multilevel step and flash imprint lithography 16:00 Path towards an EUV mask making infrastructure for commercial use 11:50 Pascal Gubbini Molecular Imprints Grenoble, France Controlling linewidth roughness in Step and Flash Imprint Lithography 16:20 Peter Hahmann Vistec E-Beam Jena Optimization of VSB high resolution exposure by applying isofocal dose method for latest CAR evaluation 12:10 Emmanuel Rausa Oerlikon 16:40 St. Petersburg, FL, USA Current dry etch performances - CD results on next generation photomasks Christoph Hohle Qimonda Dresden E-beam direct write for manufacturing customer samples: integration of entire metal layer into logic chip technology 12:30 Michael Sowa AP&S International Donaueschingen Surface contamination from an equipment manufacturers experience 17:00 Laurent Pain CEA-Leti Grenoble, France How transitionning the ML2 technology from laboratories to industry ? 12:50 Lunch Break 13:10 Tilmann Heil Zeiss SMT AG Oberkochen Jan-Hendrik Peters AMTC Dresden Joint Dinner 18:30