Advanced Power Electronics Corp.
Transcrição
Advanced Power Electronics Corp.
AP4511GM-HF Halogen-Free Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement N-CH BVDSS D2 D2 ▼ Low On-resistance 35V RDS(ON) D1 D1 25mΩ ID ▼ Fast Switching Performance ▼ RoHS Compliant & Halogen-Free SO-8 S1 G2 S2 G1 7A P-CH BVDSS Description -35V RDS(ON) 40mΩ ID -6.1A AP4511 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. D2 D1 G2 G1 The SO-8 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications. S1 S2 o Absolute Maximum Ratings@Tj=25 C(unless otherwise specified) Symbol Parameter Rating N-channel VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ ID@TA=70℃ Drain Current, VGS @ 10V 3 Drain Current, VGS @ 10V 3 1 Units P-channel 35 -35 V +20 +20 V 7 -6.1 A 5.7 -5 A 30 -30 A IDM Pulsed Drain Current PD@TA=25℃ Total Power Dissipation 2.0 W Linear Derating Factor 0.016 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice 3 Value Unit 62.5 ℃/W 1 201501093 AP4511GM-HF N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units 35 - - V BVDSS Drain-Source Breakdown Voltage ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.02 - V/℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=7A - 18 25 mΩ VGS=4.5V, ID=5A - 29 37 mΩ VGS=0V, ID=250uA VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=10V, ID=7A - 9 - S IDSS Drain-Source Leakage Current VDS=35V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=70oC) VDS=28V, VGS=0V - - 25 uA IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA Qg Total Gate Charge ID=7A - 11 18 nC Qgs Gate-Source Charge VDS=28V - 3 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 6 - nC td(on) Turn-on Delay Time VDS=18V - 12 - ns tr Rise Time ID=1A - 7 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 22 - ns tf Fall Time RD=18Ω - 6 - ns Ciss Input Capacitance VGS=0V - 830 1330 pF Coss Output Capacitance VDS=25V - 150 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 110 - pF Rg Gate Resistance f=1.0MHz - 1.2 1.8 Ω Min. Typ. IS=1.7A, VGS=0V - - 1.2 V Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage trr Reverse Recovery Time IS=7A, VGS=0V - 18 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 12 - nC 2 AP4511GM-HF o P-CH Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol Parameter Test Conditions BVDSS Drain-Source Breakdown Voltage ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient RDS(ON) Min. Typ. -35 - - V Reference to 25℃,ID=-1mA - -0.02 - V/℃ VGS=-10V, ID=-6A - 32 40 mΩ VGS=-4.5V, ID=-4A - 50 60 mΩ VGS=0V, ID=-250uA 2 Static Drain-Source On-Resistance Max. Units VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V gfs IDSS Forward Transconductance VDS=-10V, ID=-6A - 9 - S VDS=-35V, VGS=0V - - -1 uA Drain-Source Leakage Current o Drain-Source Leakage Current (Tj=70 C) VDS=-28V, VGS=0V - - -25 uA IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA Qg Total Gate Charge ID=-6A - 10 16 nC Qgs Gate-Source Charge VDS=-28V - 2 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 6 - nC td(on) Turn-on Delay Time VDS=-18V - 10 - ns tr Rise Time ID=-1A - 6 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=-10V - 26 - ns tf Fall Time RD=18Ω - 7 - ns Ciss Input Capacitance VGS=0V - 690 1100 pF Coss Output Capacitance VDS=-25V - 165 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 130 - pF Rg Gate Resistance f=1.0MHz - 5.2 7.8 Ω Min. Typ. Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage IS=-1.7A, VGS=0V - - -1.2 V trr Reverse Recovery Time IS=-6A, VGS=0V - 20 - ns Qrr Reverse Recovery Charge dI/dt=-100A/µs - 12 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 2 3.Surface mounted on 1 in copper pad of FR4 board, t <10sec ; 135 ℃/W when mounted on Min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 3 AP4511GM-HF N-Channel 50 50 T A = 25 o C 40 ID , Drain Current (A) ID , Drain Current (A) 40 30 4.5V 20 V G =3.0V 10 5.0V 30 4.5V 20 V G =3.0V 10 0 0 0 1 2 3 4 0 5 1 2 3 4 5 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 40 1.8 ID=5A ID=7A V G =10V 1.6 T A =25 o C Normalized RDS(ON) 35 RDS(ON) (mΩ ) 10V 7.0V T A = 150 o C 10V 7.0V 5.0V 30 1.4 1.2 1.0 25 0.8 20 0.6 2 4 6 8 10 -50 0 50 100 150 T j , Junction Temperature ( o C) V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 6 1.5 5 Normalized VGS(th) 1.3 IS(A) 4 T j =150 o C T j =25 o C 3 1.1 0.9 2 0.7 1 0.5 0 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 o T j , Junction Temperature ( C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 4 AP4511GM-HF N-Channel f=1.0MHz 1000 12 8 C (pF) VGS , Gate to Source Voltage (V) C iss I D =7A V DS =28V 10 6 C oss C rss 100 4 2 10 0 0 5 10 15 20 1 25 5 9 Q G , Total Gate Charge (nC) 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 100 ID (A) 10 Normalized Thermal Response (Rthja) Duty factor=0.5 10us 1ms 1 10ms 100ms T A =25 o C Single Pulse 0.1 1s DC 0.01 0.2 0.1 0.1 0.05 0.02 0.01 PDM t 0.01 Single Pulse T Duty factor = t/T Peak Tj = PDM x Rthja + Ta o Rthja =135 C/W 0.001 0.1 1 10 100 0.0001 0.001 V DS , Drain-to-Source Voltage (V) 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 30 VG V DS =5V ID , Drain Current (A) T j =25 o C T j =150 o C QG 20 4.5V QGS QGD 10 Charge Q 0 0 2 4 6 8 V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 5 AP4511GM-HF P-Channel 50 50 -10V -7.0V T A = 25 o C 40 40 -ID , Drain Current (A) -ID , Drain Current (A) -5.0V -4.5V 30 20 V G = - 3.0V -5.0V 30 -4.5V 20 V G = - 3.0V 10 10 0 0 0 1 2 3 4 0 5 1 -V DS , Drain-to-Source Voltage (V) 2 3 4 5 -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 60 1.4 I D =-6A V G =-10V I D = -4 A 55 T A =25 o C 1.2 Normalized RDS(ON) RDS(ON) (mΩ ) -10V -7.0V o T A = 150 C 50 45 40 1.0 0.8 35 0.6 30 2 4 6 8 -50 10 0 50 100 150 T j , Junction Temperature ( o C) -V GS ,Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 6 1.5 5 Normalized VGS(th) 1.3 -IS(A) 4 o o T j =150 C 3 T j =25 C 1.1 0.9 2 0.7 1 0.5 0 0 0.2 0.4 0.6 0.8 1 -V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 o T j , Junction Temperature ( C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 6 AP4511GM-HF P-Channel 12 I D = -6 A V DS = - 28V 10 8 C (pF) -VGS , Gate to Source Voltage (V) f=1.0MHz 10000 6 C iss 1000 4 C oss 2 C rss 100 0 0 5 10 15 20 1 25 5 Fig 7. Gate Charge Characteristics 13 17 21 25 29 Fig 8. Typical Capacitance Characteristics 1 Normalized Thermal Response (R thja) 100 100us 10 1ms -ID (A) 9 -V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) 10ms 1 100ms 1s o 0.1 T c =25 C Single Pulse DC Duty factor=0.5 0.2 0.1 0.1 0.05 0.02 0.01 PDM 0.01 t Single Pulse T Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=135oC/W 0.001 0.01 0.1 1 10 100 0.0001 0.001 0.01 -V DS , Drain-to-Source Voltage (V) 0.1 1 10 100 1000 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 30 VG -ID , Drain Current (A) V DS =-5V T j =25 o C T j =150 o C QG 20 -4.5V QGS QGD 10 Charge Q 0 0 2 4 6 8 -V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 7 AP4511GM-HF MARKING INFORMATION Part Number 4511GM YWWSSS meet Rohs requirement for low voltage MOSFET only Package Code Date Code (YWWSSS) Y:Last Digit Of The Year WW:Week SSS:Sequence 8
Documentos relacionados
SFORUM 2007 - Design Session, SBCCI Interest (07/04/2007) – 16
Short-Channel Effects Improvement By Using Double-Gate Soi Mosfet
Leia mais