ims chips partner for advanced nanopatterning

Transcrição

ims chips partner for advanced nanopatterning
Fax registration
Information
IMS CHIPS
PARTNER FOR ADVANCED
NANOPATTERNING
to
Institut für Mikroelektronik Stuttgart
Fax +49 (0) 711 / 21 855 222
(Online registration is also possible: www.ims-chips.de)
Deadline for registration
October 12, 2007
Participation fee (includes lunch + dinner)
120,- € incl. VAT
We will invoice you for the fee.
Speakers free.
You will receive a confirmation of registration.
Cancellation
In case of cancellation after expiration of the deadline
75% of the fee will be charged. It is possible to send
a substitute for a registered person.
Sender
How to get to IMS by car
Leave autobahn A8 or A81 at the intersection "Autobahnkreuz
Stuttgart"in the direction of "Vaihingen". Take exit "Universität".
At the traffic light, turn left to "Universitätsstraße". Stay on this
road. Then, shortly after Fraunhofer Institute, turn right to
"Allmandring".
First name, last name
IMS is the green building immediately on the left set back from
the street. Parking spaces are available opposite to the entrance
to IMS.
Company, institution
Street, house number, PO box
Organization
Mathias Irmscher
phone +49 (0) 711 / 21 855-450
fax
+49 (0) 711 / 21 855-7450
e-mail [email protected]
Zip code, city
Country
Contact
Viktoria Syassen
phone +49 (0) 711 / 21 855-202
fax
+49 (0) 711 / 21 855-222
e-mail [email protected]
Phone, fax
E-mail
o yes o no
Do you intend to participate in the joint dinner?
Date, signature
Please use one form per person.
5th Workshop “Masks & More“
October 26, 2007
in Stuttgart
Address
Institut für Mikroelektronik Stuttgart (IMS)
Allmandring 30 a
70569 Stuttgart
www.ims-chips.de
061/F/09_07
Institut für Mikroelektronik Stuttgart
5th Workshop „Masks & More“
It is our pleasure to invite you to our 5th “Mask &
More” workshop. This one-day-event has been well
established as a platform where our collaboration
partners and guests get the latest information in nano
patterning using advanced and emerging lithographic
techniques. In addition, workshop participants can
discover new technical and business opportunities
enabled by IMS’ and our partner’s technologies,
know-how, and infrastructure.
We also are proud to announce that again this year
numerous experts from our partner companies and
institutes are giving presentations covering their joint
projects with IMS.
In addition to our long-term work on resist evaluation
for mask making and direct write and our work on
future mask concepts, we have started a program in
the last year focussing activities on the development
of components for multiple-beam pattern generators.
In close cooperation with project partners we will
combine CMOS devices and micromechanical parts
to a blanking system for electron or ion beams.
Our Vistec E-beam writer was upgraded with a new
high-resolution column. With the achieved resolution
capability of 40 nm half pitch in dedicated pCARs we
are now operating a powerful tool suitable for future
tasks in nano patterning.
Remarkable progress has been achieved in the
recently launched European imprint initiative within
the framework of MEDEA+. One milestone for IMS
was the fabrication of the first dual damascene templates with minimum pillar size of down to 50 nm. In
this pre-competitive technology stage we are now
working on a world-wide collaboration with partners
in the US and Japan.
I look forward to seeing you on October 26.
Mathias Irmscher
Program
Friday, October 26, 2007
Joachim Burghartz,
Mathias Irmscher,
IMS, Stuttgart
Axel Feicke
AMTC
Dresden
Koji Shirakawa
Fujifilm
Fokuoka, Japan
Tasuku Matsumiya
TOK
Kanagawa, Japan
Andreas Erdmann
FhG IISB
Erlangen
Welcome and IMS lithography
update 2007
9:30
Bert Jan Kampherbeek
MAPPER Lithography
Delft, Netherlands
MAPPER: High throughput
maskless lithography
14:00
Future node resist requirements
for photomasks and direct write
e-beam processes
9:50
Elmar Platzgummer
Projection maskless patterning for
the fabrication of leading-edge
complex masks and 3D templates
14:20
IMS Nanofabrication
Vienna, Austria
The material design of mask
resist for the next generation
lithography
10:10
Josef Weber
FhG IZM
Munich
3D chip integration using
through Si vias and solid-liquid
interdiffusion bonding
14:40
Recent progress of TOK chemically amplified e-beam resist
10:30
Wolfram Klingler
IMS
Stuttgart
Chip designs for multiple beam
aperture plates
15:00
Evaluation of mask materials
and geometries by lithography
simulation
10:50
Volker Boegli
NaWoTec
Roßdorf
Electron-beam based mask and
template repair
15:20
Coffee Break
11:10
Coffee Break
15:40
Catadioptric optics enabling
hyper-NA immersion lithography
11:30
Jordan Owens
ATDF
Austin, TX, USA
Dual Damascene BEOL processing using multilevel step and
flash imprint lithography
16:00
Path towards an EUV mask
making infrastructure for commercial use
11:50
Pascal Gubbini
Molecular Imprints
Grenoble, France
Controlling linewidth roughness
in Step and Flash Imprint
Lithography
16:20
Peter Hahmann
Vistec E-Beam
Jena
Optimization of VSB high resolution
exposure by applying isofocal dose
method for latest CAR evaluation
12:10
Emmanuel Rausa
Oerlikon
16:40
St. Petersburg, FL, USA
Current dry etch performances
- CD results on next generation
photomasks
Christoph Hohle
Qimonda
Dresden
E-beam direct write for manufacturing
customer samples: integration of entire
metal layer into logic chip technology
12:30
Michael Sowa
AP&S International
Donaueschingen
Surface contamination from an
equipment manufacturers
experience
17:00
Laurent Pain
CEA-Leti
Grenoble, France
How transitionning the ML2
technology from laboratories to
industry ?
12:50
Lunch Break
13:10
Tilmann Heil
Zeiss SMT AG
Oberkochen
Jan-Hendrik Peters
AMTC
Dresden
Joint Dinner
18:30