Fairchild Semiconductor FDMA291P Datasheet

FDMA291P
Single P-Channel 1.8V Specified PowerTrench“ MOSFET
General Description
Features
This device is designed specifically for battery charge
x –6.6 A, –20V. rDS(ON) = 42 m: @ VGS = –4.5V
or load switching in cellular handset and other ultra-
rDS(ON) = 58 m: @ VGS = –2.5V
rDS(ON) = 98 m: @ VGS = –1.8V
portable applications. It features a MOSFET with low
x Low profile – 0.8 mm maximum – in the new package
on-state resistance.
MicroFET 2x2 mm
The MicroFET 2x2 package offers exceptional thermal
performance for its physical size and is well suited to
Free from halogenated compounds and antimony
oxides
linear mode applications.
RoHS Compliant
D
Pin 1
D
G
Bottom Drain Contact
Source
Drain
D
D
D 1
6 D
D 2
5 D
G 3
4 S
S
MicroFET 2x 2
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
Drain Current
ID
o
TA=25 C unless otherwise noted
Ratings
– Continuous
(Note 1a)
– Pulsed
TJ, TSTG
V
r8
V
A
–6.6
–24
Power Dissipation for Single Operation
PD
Units
–20
(Note 1a)
2.4
(Note 1b)
0.9
Operating and Storage Junction Temperature Range
–55 to +150
W
qC
Thermal Characteristics
RTJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
52
RTJA
Thermal Resistance, Junction-to-Ambient
(Note 1b)
145
qC/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
291
FDMA291P
7’’
8mm
3000 units
”2009 Fairchild Semiconductor Corporation
FDMA291P Rev B5
FDMA291P Single P-Channel 1.8V Specified PowerTrench“ MOSFET
June 2014
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
'BVDSS
'TJ
IDSS
IGSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
–20
ID = –250 PA
VGS = 0 V,
ID = –250 PA, Referenced to 25°C
V
mV/qC
–12
Zero Gate Voltage Drain Current
VDS = –16 V,
VGS = 0 V
–1
PA
Gate–Body Leakage
VGS = ± 8 V,
VDS = 0 V
±100
nA
On Characteristics
(Note 2)
VGS(th)
'VGS(th)
'TJ
rDS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
VDS = VGS,
ID = –250 PA
ID = –250 PA, Referenced to 25°C
–0.4
–0.7
–1.0
V
VGS = –4.5 V, ID = –6.6 A
VGS = –2.5 V, ID = –5.1 A
VGS = –1.8 V, ID = –3.9 A
VGS= –4.5 V, ID = –6.6 A, TJ=125°C
36
51
79
49
gFS
Forward Transconductance
VDS = –5 V,
ID = –6.6 A
16
S
VDS = –10 V,
f = 1.0 MHz
V GS = 0 V,
1000
pF
190
pF
100
pF
mV/qC
3
42
58
98
64
m:
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
Qg
Total Gate Charge
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
(Note 2)
VDD = –10 V, ID = –1 A,
VGS = –4.5 V, RGEN = 6 :
VDS = –10 V,
VGS = –4.5 V
ID = –6.6 A,
13
23
ns
9
18
ns
42
68
ns
25
40
ns
10
14
nC
2
nC
3
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
VSD
trr
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Qrr
Diode Reverse Recovery Charge
VGS = 0 V, IS = –2 A
IF = –6.6 A,
dIF/dt = 100 A/µs
(Note 2)
–0.8
–2
A
–1.2
V
20
ns
8
nC
Notes:
1. RTJA is determined with the device mounted on a 1 in2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJC is guaranteed by design while RTJA is
determined by the user's board design.
a. 52 °C/W when mounted
on a 1 in2 pad of 2 oz copper.
b. 145 °C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300Ps, Duty Cycle < 2.0%
FDMA291P Rev B5
FDMA291P Single P-Channel 1.8V Specified PowerTrench“ MOSFET
Electrical Characteristics
24
2.6
VGS = -4.5V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
-2.5V
20
-ID, DRAIN CURRENT (A)
VGS = -1.8V
-3.0V
16
-4.0V
-3.5V
12
-2.0V
8
-1.8V
4
0
2.2
2
1.8
-2.0V
1.6
-2.5V
1.4
-3.0V
-3.5V
1.2
1
2
3
4
-VDS, DRAIN-SOURCE VOLTAGE (V)
5
0
Figure 1. On-Region Characteristics.
-4.5V
4
8
12
16
-ID, DRAIN CURRENT (A)
20
24
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.15
1.6
ID = -6.6A
VGS = -10V
RDS(ON), ON-RESISTANCE (OHM)
ID = -3.3A
1.4
1.2
1
0.8
0.6
0.12
0.09
o
TA = 125 C
0.06
TA = 25oC
0.03
0
-50
-25
0
25
50
75
100
o
TJ, JUNCTION TEMPERATURE ( C)
125
150
0
Figure 3. On-Resistance Variation with
Temperature.
2
4
6
8
-VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
24
100
VGS = 0V
-IS, REVERSE DRAIN CURRENT (A)
VDS = -10V
20
-ID, DRAIN CURRENT (A)
-4.0V
1
0.8
0
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
2.4
TA = -55oC
125oC
16
o
25 C
12
8
4
0
10
1
0.1
o
TA = 125 C
0.01
25oC
0.001
-55oC
0.0001
0
1
2
3
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
4
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-VSD, BODY DIODE FORWARD VOLTAGE (V)
1.6
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDMA291P Rev B5
FDMA291P Single P-Channel 1.8V Specified PowerTrench“ MOSFET
Typical Characteristics
1600
f = 1MHz
VGS = 0 V
VDS = -5V
ID = -6.6A
-15V
8
CAPACITANCE (pF)
-VGS, GATE-SOURCE VOLTAGE (V)
10
-10V
6
4
1200
Ciss
800
Coss
400
2
Crss
0
0
0
4
8
12
16
Qg, GATE CHARGE (nC)
20
24
0
Figure 7. Gate Charge Characteristics.
100
P(pk), PEAK TRANSIENT POWER (W)
RDS(ON) LIMIT
1
0.01
10s
DC
100us
1ms
10ms
100ms
1s
VGS = -10V
SINGLE PULSE
RTJA = 145oC/W
o
TA = 25 C
0.001
0.01
0.1
1
10
100
-VDS, DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE
RTJA = 145°C/W
TA = 25°C
80
60
40
20
0
0.0001
1000
Figure 9. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
-ID, DRAIN CURRENT (A)
100
0.1
20
Figure 8. Capacitance Characteristics.
1000
10
4
8
12
16
-VDS, DRAIN TO SOURCE VOLTAGE (V)
0.001
0.01
0.1
1
t1, TIME (sec)
10
100
1000
Figure 10. Single Pulse Maximum Power
Dissipation.
1
D = 0.5
RTJA(t) = r(t) * RTJA
RTJA =145 °C/W
0.2
0.1
0.1
0.05
P(pk)
0.02
t1
0.01
t2
TJ - TA = P * RTJA(t)
Duty Cycle, D = t1 / t2
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDMA291P Rev B5
FDMA291P Single P-Channel 1.8V Specified PowerTrench“ MOSFET
Typical Characteristics
FDMA291P Single P-Channel 1.8V specified PowerTrench® MOSFET
Dimensional Outline and Pad Layout
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild's worldwide terms and conditions,
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Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_MLDEB-C06
FDMA291P Rev. B5
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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2.
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Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I68
FDMA291P Rev. B5
6
www.fairchildsemi.com
FD MA291P Single P-Channel 1.8 V Specified PowerTrench ® MOSFET
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