FQD2P40
Transcrição
FQD2P40
FQD2P40 P-Channel QFET® MOSFET -400 V, -1.56 A, 6.5 Ω Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.. • -1.56 A, -400 V, RDS(on) = 6.5 Ω (Max.) @ VGS = -10 V, ID = -0.78 A • Low Gate Charge (Typ. 10 nC) • Low Crss (Typ. 6.5 pF) • 100% Avalanche Tested • RoHS Compliant S D G S G D-PAK D Absolute Maximum Ratings Symbol VDSS ID TC = 25°C unless otherwise noted. Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) IDM Drain Current VGSS Gate-Source Voltage EAS IAR EAR dv/dt PD (Note 1) Unit V -1.56 A -0.98 A -6.24 A ± 30 V Single Pulsed Avalanche Energy (Note 2) 120 mJ Avalanche Current (Note 1) -1.56 A Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * (Note 1) 3.8 -4.5 2.5 mJ V/ns W 38 0.3 -55 to +150 W W/°C °C 300 °C (Note 3) Power Dissipation (TC = 25°C) TJ, TSTG TL - Pulsed FQD2P40TM -400 - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering, 1/8” from case for 5 seconds Thermal Characteristics Symbol RJC RJA Parameter FQD2P40TM 3.29 Thermal Resistance, Junction to Case, Max. Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max. 2 Thermal Resistance, Junction to Ambient (*1 in Pad of 2-oz Copper), Max. ©2008 Fairchild Semiconductor Corporation FQD2P40 Rev. C0 Unit 1 110 oC/W 50 www.fairchildsemi.com FQD2P40 — P-Channel QFET® MOSFET November 2013 Part Number FQD2P40TM Electrical Characteristics Symbol Package D-PAK Top Mark FQD2P40 Packing Method Tape and Reel Reel Size 330 mm Tape Width 16 mm Quantity 2500 units TC = 25°C unless otherwise noted. Parameter Test Conditions Min. Typ. Max. Unit -400 -- -- V -- - -- V/°C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = -250 µA, Referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = -400 V, VGS = 0 V -- -- -1 µA VDS = -320 V, TC = 125°C -- -- -10 µA IGSSF Gate-Body Leakage Current, Forward VGS = -30 V, VDS = 0 V -- -- -100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = 30 V, VDS = 0 V -- -- 100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA -3.0 -- -5.0 V RDS(on) Static Drain-Source On-Resistance VGS = -10 V, ID = -0.78 A -- 5.0 6.5 Ω gFS Forward Transconductance VDS = -50 V, ID = -0.78 A -- 1.26 -- S VDS = -25 V, VGS = 0 V, f = 1.0 MHz -- 270 350 pF -- 45 60 pF -- 6.5 8.5 pF -- 9 30 ns -- 33 75 ns -- 22 55 ns -- 25 60 ns -- 10 13 nC -- 2.1 -- nC -- 5.5 -- nC Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = -200 V, ID = -2.0 A, RG = 25 Ω (Note 4) VDS = -320 V, ID = -2.0 A, VGS = -10 V (Note 4) Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- -1.56 A ISM -- -- -6.24 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = -1.56 A Drain-Source Diode Forward Voltage -- -- -5.0 V trr Reverse Recovery Time -- 250 -- ns Qrr Reverse Recovery Charge VGS = 0 V, IS = -2.0 A, dIF / dt = 100 A/µs -- 0.85 -- µC Notes: 1. Repetitive rating : pulse-width limited by maximum junction temperature. 2. L = 86 mH, IAS = -1.56 A, VDD = -50 V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ -2.0 A, di/dt ≤ 200 A/µs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially independent of operating temperature. ©2008 Fairchild Semiconductor Corporation FQD2P40 Rev. C0 2 www.fairchildsemi.com FQD2P40 — P-Channel QFET® MOSFET Package Marking and Ordering Information VGS -15.0 V -10.0 V -8.0 V -7.0 V -6.5 V -6.0 V Bottom : -5.5 V 0 -I D, Drain Current [A] 10 -I D , Drain Current [A] Top : -1 10 ※ Notes : 1. 250μs Pulse Test 2. TC = 25℃ 150℃ 25℃ ※ Notes : 1. VDS = -50V 2. 250μs Pulse Test -55℃ -2 10 0 10 -1 -1 0 10 10 1 10 10 2 4 6 8 10 -VGS , Gate-Source Voltage [V] -VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 10 -I DR , Reverse Drain Current [A] RDS(on) [ Ω ], Drain-Source On-Resistance 12 VGS = - 10V VGS = - 20V 8 6 ※ Note : TJ = 25℃ 4 0 10 150℃ ※ Notes : 1. VGS = 0V 2. 250μs Pulse Test -1 0 1 2 3 4 5 10 6 0.0 0.5 -ID , Drain Current [A] 600 300 Coss ※ Notes : 1. VGS = 0 V 2. f = 1 MHz 200 Crss 0 -1 10 0 10 3.0 VDS = -200V 10 VDS = -320V 8 6 4 2 ※ Note : ID = -2.0 A 0 1 -VDS, Drain-Source Voltage [V] 0 2 4 6 8 10 12 QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics ©2008 Fairchild Semiconductor Corporation FQD2P40 Rev. C0 2.5 VDS = -80V 10 Ciss 100 2.0 12 -V GS , Gate-Source Voltage [V] 400 1.5 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 500 1.0 -VSD , Source-Drain Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Capacitance [pF] 25℃ Figure 6. Gate Charge Characteristics 3 www.fairchildsemi.com FQD2P40 — P-Channel QFET® MOSFET Typical Characteristics (Continued) 2.5 2.0 1.1 RDS(ON) , (Normalized) Drain-Source On-Resistance -BV DSS , (Normalized) Drain-Source Breakdown Voltage 1.2 1.0 ※ Notes : 1. VGS = 0 V 2. ID = -250 μA 0.9 0.8 -100 -50 0 50 100 150 1.5 1.0 ※ Notes : 1. VGS = -10 V 2. ID = -1.0 A 0.5 0.0 -100 200 -50 0 50 100 150 200 o o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 1.8 Operation in This Area is Limited by R DS(on) 1 10 1.5 1 ms -I D, Drain Current [A] -I D, Drain Current [A] 100 µs 10 ms 0 10 DC -1 10 ※ Notes : o 1. TC = 25 C 1.2 0.9 0.6 0.3 o 2. TJ = 150 C 3. Single Pulse -2 10 0 1 10 2 10 0.0 25 3 10 10 50 Figure 9. Maximum Safe Operating Area ZJC(t), Thermal Response [oC/W] 75 100 125 150 TC, Case Temperature [℃] -VDS, Drain-Source Voltage [V] Figure 10. Maximum Drain Current vs. Case Temperature D = 0 .5 10 0 ※ N o te s : 1 . Z θ J C( t) = 3 .2 9 ℃ /W M a x . 2 . D u ty F a c to r , D = t1 /t2 3 . T JM - T C = P D M * Z θ J C( t) 0 .2 0 .1 0 .0 5 10 PDM 0 .0 2 -1 0 .0 1 t1 s in g le p u ls e 10 -5 10 -4 10 t2 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] Figure 11. Transient Thermal Response Curve ©2008 Fairchild Semiconductor Corporation FQD2P40 Rev. C0 4 www.fairchildsemi.com FQD2P40 — P-Channel QFET® MOSFET Typical Characteristics FQD2P40 — P-Channel QFET® MOSFET 50KΩ 50K Ω 200nF 200nF 12V VGS Same Same T Ty ype as DUT DUT Qg 300nF 300nF VDS VGS Qgs Qgd DUT DUT IG = const. Charg Ch arge e Figure 12. Gate Charge Test Circuit & Waveform VDS RG RL t on td(on d( on)) VDD VGS VGS t of offf tr td(of d( offf) tf 10 10% % DUT VGS VDS 90% Figure 13. Resistive Switching Test Circuit & Waveforms VDS BVDS DSS S 1 -----------------------------EAS = ---- L IAS2 ------2 BVDS DSS S - VDD L tp ID RG VGS Tim Ti me VDD VDD VDS (t) (t)) ID (t DUT DUT IAS BVDSS tp Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms ©2008 Fairchild Semiconductor Corporation FQD2P40 Rev. C0 5 www.fairchildsemi.com FQD2P40 — P-Channel QFET® MOSFET + VDS DUT _ I SD L Driver Driv er RG VGS VGS ( Driv Driver er ) I SD ( DUT ) Compliment of DUT Comp (N-C (N-Channel hannel)) VDD • dv/dt cont ntrrolled by RG • ISD con onttrol ollled by pu pullse pe perriod Gate Pul ulsse W idth D = -------------------------te Pu Gate Ga Pullse Pe Perriod 10 10V V Body Bo dy Diod ode e Reverse Curren entt IRM di//dt di IFM , Bo Body dy Diod ode e For orw ward Curren entt VDS ( DUT ) VSD Body Bo dy Diode For Forw ward Vol olttag age e Drop Drop VDD Body Bo dy Di Diod ode e Recov cove ery dv dv/d /dtt Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms ©2008 Fairchild Semiconductor Corporation FQD2P40 Rev. C0 6 www.fairchildsemi.com FQD2P40 — P-Channel QFET® MOSFET Mechanical Dimensions Figure 16. TO252 (D-PAK), Molded, 3-Lead, Option AA&AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT252-003 ©2008 Fairchild Semiconductor Corporation FQD2P40 Rev. C0 7 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. 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Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 ©2008 Fairchild Semiconductor Corporation FQD2P40 Rev. C0 8 www.fairchildsemi.com FQD2P40 — P-Channel QFET® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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