electron
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electron
Printed Electronics Hans Martin Sauer Institute of Printing Science and Technology Materials for Printed Electronics SS2012 Materials for Field Effect Transistors Printed Electronics SS 2012 | Institut für Druckmaschinen und Druckverfahren | Hans Martin Sauer Objective and Scope Introduction to important classes of organic and inorganic materials for printed electronics • Fundamentals on electrons and chemical bonds in solids and organic compounds • Metals, semiconductors, insulators • What is an organic semiconductor ? • Examples for organic semiconductors Printed Electronics SS 2012 | Institut für Druckmaschinen und Druckverfahren | Hans Martin Sauer | 2 Set-up of Field Effect Transistor Semiconductor Conductor • Organic (polymers, oligomers, „small“ molecules) • Ceramic (oxides, other chalcogenides) • Metals • Conductive Pastes and inks (composites) • Polymers • Ceramic (TCOs) Insulator • Ceramic (oxides, nitrides, silicates) • Polymers Compatibility Coating procedures Semiconductor Source Drain Dielectric • Gas phase techniques • Spin- oder Dipcoating • Printing Gate Substrate Printed Electronics SS 2012 | Institut für Druckmaschinen und Druckverfahren | Hans Martin Sauer | 3 The aim: Fully printed TFTs A. Hübler et al. Applied Physics Letters (2005) M. Halik et al. Advanced Materials (2003) • Metal electrodes (source and drain) created by vacuum depositon or by printing (from conducting polymer PEDOT-PSS formulation) • Organic semiconductors by gas phase deposition or coating • Gate dielectrics (polymer: PMMA) by printing • Gate electrode (silver or gold) by vacuum deposition Printed Electronics SS 2012 | Institut für Druckmaschinen und Druckverfahren | Hans Martin Sauer | 4 A crash course in Q. M.: how organic semiconductors work Printed Electronics SS 2012 | Institut für Druckmaschinen und Druckverfahren | Hans Martin Sauer | 5 Atomic electron states -- 1 elecron, 1 atom • • • • • • Electrons are described by a wave function Y(r,t) i.e. a stationary solution of the Schrödinger equation. Also -Y(r,t) is a solution. The wave function corresponds to a spatial probability distribution |Y(r,t)|2 to find the electron at a specific point in space. Electron states: In an isolated atom, the stationary states are a discrete set of highly symmetric wave functions Ynlms(r,t), specified by quantum numbers: - electron shell n =1,2,3,… - sub-shell l = 0,1,2,…,n (s, p, d, f,…) - orbital within sub-shell m = -l,…,+l - electron spin S = -1/2 („down“), +1/2 („up“) Each wave function corresponds to a specific binding energy Enlms of the electron to the atom, Hydrogen atom: E100 = -13.6 eV All 2(2L+1) states on the same sub-shell L are (almost) degenerate (= equal energy) Fermi rule: States can be „occupied“ by max. 1 electron, or be „empty“ Source: wikipedia Printed Electronics SS 2012 | Institut für Druckmaschinen und Druckverfahren | Hans Martin Sauer | 6 Atomic electron states – more than 1 electron in an atom • Energy minimization: If there are k electrons in an atom, the k states with lowest energies are occupied by them, starting with the lowest shells Hund‘s rule: when subsequently adding 1… 2(2l+1) electrons to a degenerate sub-shell l: - the first 2l+1 electrons occupy distinct orbitals m = -l,…,+l, and they all have the same spin s (say +1/2) - the next 2l+1 complete the half-occupied orbitals, and their spin s is inverted (i.e. -1/2) Charge neutrality: # electrons = # protons in the atom core, otherwise: ions (+) or (-) charge -> periodic table of the elements • • 0 = „vaccum level“ energy hydrogen helium lithium berylium borium carbon 1s1 1s2 1s2 2s1 1s2 2s2 1s2 2s2 2p1 Printed Electronics SS 2012 | Institut für Druckmaschinen und Druckverfahren | Hans Martin Sauer 1s2 2s2 2p2 | 7 Interacting atoms – band structure in solids Electron energy Wave function symmetries under atom exchange Y2atoms (r1, r2 ) Y1 (r1 ) Y2 (r2 ) N=1 degenarate Anti-symmetric: repulsion Ya (r1, r2 ) Y1 (r1 ) Y2 (r2 ) Y1 (r2 ) Y2 (r1 ) Ya (r2 , r1 ) N=2 symmetric: attraction Ys (r1, r2 ) Y1 (r1 ) Y2 (r2 ) Y1 (r2 ) Y2 (r1 ) Ys (r2 , r1 ) Totally anti-symmetric N=4 Mixed symmetries Electron energy Totally symmetric N= Fermi energy Formation of bands by step-wise alignment of n orbitals Printed Electronics SS 2012 | Institut für Druckmaschinen und Druckverfahren | Hans Martin Sauer | 8 Band structure and charge transport in molecular solids • HOMO = Highest occupied molecular level, LUMO = Lowest unoccupied molecular level • Energy gap = EHOMO - ELUMO • Charge transport: - shifting an electron into an unoccupied state - Spatial mobility of electron and „hole“ between the atoms Printed Electronics SS 2012 | Institut für Druckmaschinen und Druckverfahren | Hans Martin Sauer | 9 Band structure in solids Metal Semiconductor Insulator „Work Function“ Conduction Band Band Gap Binding Energy Vacuum Level Fermi Level Valence Band Electron states exist at EF, No Energy gap between occupied and non-occupied states No electron states at EF, Energy gap exists, but is small (< 3 eV or so) No electron states at EF, Energy gap is large (< 10 eV or so) Printed Electronics SS 2012 | Institut für Druckmaschinen und Druckverfahren | Hans Martin Sauer http://iwenzo.de/wiki/Halbleiter | 10 Band structure in solids: n- and p-doping in semiconductors Semiconductor (intrinsic) Semiconductor (n-Type) Semiconductor (p-Type) Vacuum Level Binding Energy Conduction band Donor Fermi Level Acceptor Valence band Doping of semiconductors = adding small quanties of atoms with more (donor) or fewer (acceptor) electrons to the solid Example: aluminium (3p1) acts as acceptor for silicon (3p2) , phosphor (3p3) as donor Printed Electronics SS 2012 | Institut für Druckmaschinen und Druckverfahren | Hans Martin Sauer | 11 Electron states and bonds in carbon atoms (1) • Electron scheme of a carbon atom: 1s2, 2s2, 2p2; 0 Energy per electron Energy per electron 0 According to Hund‘s rule… • • … and in reality: sp3 hybridization The non-staturated electron state can form chemical bonds with non-saturated states of other atoms. CH4 (methane), C2H6 (ethane),… Printed Electronics SS 2012 | Institut für Druckmaschinen und Druckverfahren | Hans Martin Sauer Source: wiki | 12 Electron states and bonds in carbon atoms (2): C=C vs. C-C • The double bond consists of σ-bond + π-bond • The σ-bond is formed by overlapping two hybrid orbitals; The π-Bindung is formed by combination of two pzorbitals. Printed Electronics SS 2012 | Institut für Druckmaschinen und Druckverfahren | Hans Martin Sauer | 13 Electron states and bonds in carbon atoms (3) * LUMO * HOMO LUMO Lowest Unoccupied Molecular Orbital HOMO Highest Occupied Molecular Orbital Printed Electronics SS 2012 | Institut für Druckmaschinen und Druckverfahren | Hans Martin Sauer | 14 Electron states and bonds in carbon atoms (4): Conjugated bonds and electron delocalization * LUMO HOMO NOT alternating double and single bonds, but a delocalised Pi-system! Printed Electronics SS 2012 | Institut für Druckmaschinen und Druckverfahren | Hans Martin Sauer | 15 Electron states and bonds in carbon atoms (5): organic semiconductor backbone LUMO HOMO Abbildung nach: A.G. Mac Diarmid, Rev. Mod. Phys. (2001) Bonding and antibonding molecular orbitals form valence and conduction band in the solid Printed Electronics SS 2012 | Institut für Druckmaschinen und Druckverfahren | Hans Martin Sauer | 16 Organic semiconductors as conductors: p- and n-type • Electric current = removing & extraction electric charge from the molecule electron state : injection electron to a LUMO state hole state: extraction electron from a HOMO state • Adding electrons by doping (silicon: 3p2): p- and n-type achieved by adding traces of an element with less or more electrons in the valence shell (Al: 3p1, P: 3p3) Organic semiconductors: doping is difficult, may break up the molecule or create „traps“ However: mobilities of electrons injected to the LUMO and hole injected to the HOMO level is usually different for most organic semiconductors • • • P-type semiconductor: electric current is transported by a positively charged hole state, i.e. shifting an unoccupied electron state at HOMO-level along the backbone • N-Type semiconductor: electric current is transported by a negatively charged electron state, i.e. shifting an occupied electron state at LUMO-level along the backbone Printed Electronics SS 2012 | Institut für Druckmaschinen und Druckverfahren | Hans Martin Sauer | 17 Generation of p- or n-type organic semiconductors by doping n-type -> LUMO LUMO electron donating electron withdrawing substituent substituent Injection of electrons at LUMO level LUMO HOMO p-type -> HOMO HOMO injection of holes at HOMO level H H C6F13 C6H13 C6H13 C6F13 Manufacturing of organic n-type semiconductors • Essential for production of devices with complementary technology • Employment of strongly electron withdrawing substituents (Flourinated or oxygenated side groups) at the molecule backbone leads to lower binding energies of frontier orbitals and facilitates electron injection • Modification and appropriate choice of dielectric for avoidance of charge traps • Significant n-type conduction (besides p-type, i.e. ambipolar transport) in many organic semiconuctors Printed Electronics SS 2012 | Institut für Druckmaschinen und Druckverfahren | Hans Martin Sauer | 18 Semiconductors in TFTs : Polythiophene, Polythienylvinylene Stereoregular Polythiophenes Poly(thienylthiophenes) C6H13 C14H29 * * * * µ~0.01-0.10cm2/Vs P3HT; Sensitive towards atmosphere and light C14H29 2 µ~0.1-1.0cm /Vs PBTTT Processing under ambient conditions Poly(quarterthiophenes) C6H13 C12H15 C6H13 * * * * C6H13 C6H13µ~0.15-0.25 cm2/Vs C12H15 PQT-12; µ~0.05-0.15cm2/Vs Processing under ambient conditions No thermal post-processing required High long term stability Scherf et al. Angewandte Chemie (2009) 4138-4167. McCulloch et al. Advanced Materials (2009) 1091-1109. Printed Electronics SS 2012 | Institut für Druckmaschinen und Druckverfahren | Hans Martin Sauer | 19 Molecular Weight and mobility: Poly(alkyl-thiophenes) • Typical chain lengths: 20…20000 monomers • P3HT chains can form crystalline as well as amorphous molecular morphologies • Longer polymer chains lead to a more effective connection of the crystalline domains • Current transport between molecular chains by quantum mechaniical tunnel process (very slow) Printed Electronics SS 2012 | Institut für Druckmaschinen und Druckverfahren | Hans Martin Sauer | 20 Semiconductors in TFTs: Polyfluorenes (+Copolymeres), Polyindocarbazoles Polyindocarbazoles Polyfluorenes C8H15 * * * C8H15 C8H15 PFO; µ<0.001cm2/Vs * C8H15 Fluorenes: Blue emitting materials in OLEDs Poly(octylindocarbazole); µ~0.01cm2/Vs Polythienylvinylenes * * * C8H15 C8H15 F8T2; µ~0.008-0.02cm2/Vs (Employed in „All printed“ OFET by Sirringhaus et al. 2001) * Polythienylvinylene; µ~0.0015cm2/Vs Sensitve towards atmosphere and light Good stability against atmosphere and light Printed Electronics SS 2012 | Institut für Druckmaschinen und Druckverfahren | Hans Martin Sauer | 21 Semiconductors in TFTs: Polytriarylamines Interesting alternative to thiophen systems: R • Low charge carrier mobility • Not crystalline, but completely amorphous; i.e. good reproducibility, small influence of processing parameters • Good stability against air and moisture * * • Good solubility in many organic solvents Employment in Hübner et al. 2005 in „all-printed“ TFT Printed Electronics SS 2012 | Institut für Druckmaschinen und Druckverfahren | Hans Martin Sauer | 22 Semiconductors in TFTs: n-type conducting Polymers • Polymer with Naphthalene-bis(carboxidiimide) (NDI) backbone • Good solubility in organic solvents. Stable under ambient conditions. • High regioregularity; no thermal alteration till 300°C (DSC) • Mainly amorphous; also after annealing at 200°C 6.6.12 • µ~0.45-0.85cm2/Vs Printed Electronics SS 2012 | Institut für Druckmaschinen und Druckverfahren | Hans Martin Sauer Facchetti et al. Nature (2009). | 23 Thanks for your attention! Printed Electronics SS 2012 | Institut für Druckmaschinen und Druckverfahren | Hans Martin Sauer | 24