Transistor Level CMOS Design (12 hours) -Dr. Carlos Galup

Transistor Level CMOS Design (12 hours)
-Dr. Carlos Galup-Montoro, Federal University of Santa Catarina (UFSC), Florianopolis,
Brazil.
-Dr. Márcio Cherem Schneider, Federal University of Santa Catarina (UFSC),
Florianopolis, Brazil.
The main purpose of this topic is the design of integrated circuits for low-voltage and lowpower operation.
Since the MOS transistor is the basic component of modern electronics, a careful
presentation of its basic theory will be given. Instead of the usual approach of furnishing
separate analytical formulas for the strong and weak inversion regions of the MOS
transistor, we provide simple formulas which are valid in all operating regions, including
moderate inversion. This unified design approach, which is particularly suitable for the
design in advanced CMOS technologies, allows the insightful exploration of the design
space. Ultra-low-voltage circuits have gained considerable attention in recent years because
of the emergence of small batteries and self-powered applications. In this course we
analyze CMOS logic gates and the Schmitt Trigger circuit in weak inversion operation,
which is particularly well suited for ultra-low-voltage operation. The MOSFET models are
then applied to the design of analog building blocks such as current mirrors, amplifiers,
S/H, current and voltage references. Finally, a section on ultra-low-voltage rectifiers and
oscillators is presented. Weshow that analog circuits such as rectifiers and oscillators can
operate with supply voltages below the thermal voltage (kT/q).